The field effect spin transistor, first presented by Purdue University's Supriyo Datta and Biswajit Das in 1989, was the first plan for a spintronic device based on the metal-oxide-semiconductor technology that microelectronics designers were familiar with. A source electrode introduces an electric charge, which is subsequently gathered at a drain electrode in a traditional field effect transistor. Much like stomping on a garden hose, the gate, the third electrode, creates an electric field that modifies the channel via which the source-drain current can pass. This leads to the ability of a very modest electric field to regulate huge currents. A two-dimensional electron transport channel between two ferromagnetic electrodes in the Datta-Das device is created by a structure composed of indium-aluminum-arsenide and indium-gallium-arsenide.
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