Volume 39 Issue 3
Jun.  2019
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Yangyang MU, Jianyong TU, Jimei XUE, Fang YE, Laifei CHENG. Research progress on SiCN ceramic prepared at low temperature by chemical vapor deposition[J]. Journal of Aeronautical Materials, 2019, 39(3): 1-9. doi: 10.11868/j.issn.1005-5053.2018.000132
Citation: Yangyang MU, Jianyong TU, Jimei XUE, Fang YE, Laifei CHENG. Research progress on SiCN ceramic prepared at low temperature by chemical vapor deposition[J]. Journal of Aeronautical Materials, 2019, 39(3): 1-9. 10.11868/j.issn.1005-5053.2018.000132

Research progress on SiCN ceramic prepared at low temperature by chemical vapor deposition

doi: 10.11868/j.issn.1005-5053.2018.000132
  • Received Date: 2018-12-04
  • Rev Recd Date: 2019-03-19
  • Available Online: 2019-03-28
  • Publish Date: 2019-06-01
  • Chemical vapor deposition (CVD) is a new technology for preparing inorganic materials which possess some advantages, such as lower preparation temperature, uniform and compact microstructure, and near-size molding, so it is one of the common methods to prepare functional ceramics. In the paper, several common chemical vapor deposition methods like atmospheric chemical vapor deposition, low-pressure chemical vapor deposition, plasma-enhanced chemical vapor deposition and laser-assisted chemical vapor deposition are reviewed, because the microstructure and performance of functional ceramics are greatly influenced by their fabrication methods. In addition, the deposition parameters of Si-C-N absorbing ceramics which are deposited at lower temperature by low-pressure chemical vapor deposition are optimized. It is proposed that low-pressure chemical vapor deposition is the main method for preparing the advanced EMW absorbing ceramics.

     

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