In the field of Opto-spintronics, this research leads to the advancement of the memory circuit and computation technology with the spinning degree of electrons. The femtosecond optical laser pulse is most relevant to trigger the quick change in the magnetic state of the material, which leads to the possibilities of higher speed and energy-efficient opto-spintronic devices and memory.
The all-optical switching of magnetization shows that how light-spin interaction playing an important role to the improvement of memory devices. So, this paper focuses on optical control of magnetization by transient non-equilibrium state. Finally, all-optical magnetization switching with the magnetic domain access reliable higher-power memory devices will be developed for magnetic writing with a least dissipative method. It is investigated that the effect of spin Hall effect is driven motion of magnetic domains indicates single-pulse All-optical switching.
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