Strong exchange bias (EB) in perpendicular direction has been demonstrated in vertically aligned nanocomposite (VAN) ( La0.7Sr0.3MnO3) 1−x : (LaFeO3) x (LSMO: LFO),( x = 0.33, 0.5, 0.67) thin films deposited by pulsed laser deposition. Under moderate magnetic field cooling, an EB field as high as 800 Oe is achieved in the VAN film with x = 0.33, suggesting a great potential for its applications in high-density memory devices. Such enhanced EB effects in a perpendicular direction can be attributed to the high-quality epitaxial co-growth of vertically aligned ferromagnetic LSMO and antiferromagnetic LFO phases and the vertical interface coupling associated with a disordered spin-glass state. The VAN design paves a powerful way for integrating the perpendicular EB effect within thin films and provides a new dimension for advanced spintronic devices
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